MRF892 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25°C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 25 mA 50 V BVCEO IC = 25 mA 30 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V 2.0 mA hFE VCE = 5.0 V IC = 1.0 A 10 100 --- COB VCB = 30 V f = 1.0 MHz 12.5 pF PG ηηηηC VCC = 24 V P OUT = 15 W f = 960 MHz 8.5 9.5 dB NPN SILICON RF POWER TRANSISTOR MRF892 DESCRIPTION: The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz. FEATURES:
- Internal Input Matching Network
- PG =8.5 dB at 14 W/900 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 2.5 A VCBO 50 V VCEO 30 V VEBO 4.0 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 3.5 °C/W PACKAGE STYLE .230 6L FLG MINIMUM inches / mm .115 / 2.92 .225 / 5.72 .075 / 1.91 .090 / 2.29 .720 / 18.29 B C D E F G A MAXIMUM .085 / 2.16 .110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm .125 / 3.18 H .355 / 9.02 DIM K L I J .004 / 0.10 .120 / 3.05 .230 / 5.84 .006 / 0.15 .130 / 3.30 .260 / 6.60 K 4X .025 R .040x45° .115 I .125 E .430 D H G F J C A B 2XØ.130 L .980 / 24.89.970 / 24.64 .365 / 9.27