MRF890 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 30 V BVCES IC = 5.0 mA 55 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V 500 µµµµA hFE VCE = 5.0 V IC = 100 mA 10 100 --- COB VCB = 30 V f = 1.0 MHz 2.0 pF PG ηηηηC VCC = 24 V P OUT = 2.0 V f = 900 MHz 9.0 55 dB NPN SILICON RF POWER TRANSISTOR MRF890 DESCRIPTION: The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. FEATURES:

  • Pg = 9.0 dB min. @ 900 MHz
  • P1dB = 2.0 Watts min. at 900 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 0.5 A VCBO 55 V VCER 30 V VEBO 4.0 V PDISS 7.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 25 C/W PACKAGE STYLE .205 4L STUD E E B C