MRF839F ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 40 V BVCEO IC = 5.0 mA 16 V BVEBO IE = 100 µA 3.5 V ICES VCE = 15 V 1 mA hFE VCE = 5.0 V IC = 100 mA 10 150 --- COB VCB = 15 V f = 1.0 MHz 10 pF PG ηηηηC VCE = 12.5 V I CQ = 50mA P OUT = 3.0 W FO = 870 MHz 8.0 10.0 dB NPN SILICON RF POWER TRANSISTOR MRF839F DESCRIPTION: The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz. FEATURES INCLUDE:
- Input Matching Network
- High Gain
- Gold Metalization MAXIMUM RATINGS IC 0.6 A VCES 36 V PDISS 20 W @ TC = 25 O C TJ -55 O C to +200 O C TSTG -55 O C to +150 O C θθθθJC 9.0 O C/W PACKAGE STYLE .230 6L FLG MINIMUM inches / mm .115 / 2.92 .225 / 5.72 .075 / 1.91 .090 / 2.29 .720 / 18.29 B C D E F G A MAXIMUM .085 / 2.16 .110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm .125 / 3.18 H .355 / 9.02 DIM K L I J .004 / 0.10 .120 / 3.05 .230 / 5.84 .006 / 0.15 .130 / 3.30 .260 / 6.60 K 4X .025 R .040x45° .115 I .125 E .430 D H G F J C A B 2XØ.130 L .980 / 24.89.970 / 24.64 .365 / 9.27 1 & 3 & 4 & 6 = EMITTER 2 = BASE 5 = COLLECTOR