MRF838A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 10 mA 36 V BVCEO IC = 10 mA 18 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V I C = 150 mA 20 --- COB VCB = 12.5 V f = 1.0 MHz 7.5 pF PG ηηηηC VCE = 12.5 V P OUT = 1.0 W f = 870 MHz 6.5 7.5 dB PACKAGE STYLE .205 4L STUD NPN SILICON RF POWER TRANSISTOR MRF838A DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE:
- ••• Gold Metallization
- ••• Emitter Ballasting
- ••• High Gain MAXIMUM RATINGS IC 600 mA VCBO 36 V PDISS 8.75 W @ TC = 25 O C TJ -65 O Cto +200 O C TSTG -65 O Cto +200 O C θθθθJC 20 O C/W A B H E F .098 / 2.500 .161 / 4.100 .028 / 0.700 .976 / 24.800 .138 / 3.500 .976 / 24.800 inches / mm MINIMUM A G F E D C B 1.000 / 25.4000 .110 / 2.800 .196 / 5.000 1.000 / 25.4000 MAXIMUM inches / mm .031 / 0.800 C D H I J .200 / 5.100 .425 / 10.800 .004 / 0.100 .006 / 0.150 .465 / 11.800 2.05 / 5.200 G J #8-32UNC .200 / 5.100 .208 / 5.300 DIM 1 & 3 = EMITER 2 = BASE 4 = COLLECTOR