MRF837 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 36 V BVCEO IC = 5.0 mA 16 V BVEBO IE = 100 µA 4.0 V ICES VCE = 15 V 100 µA hFE VCE = 10 V I C = 50 mA 30 200 --- COB VCB = 15 V f = 1.0 MHz 1.8 2.5 pF PG ηηηηC VCE = 12.5 V P OUT = 0.75 W f = 870 MHz 8.0 dB PACKAGE STYLE MACRO-X MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.44 5.21 0.175 0.205 C 1.90 2.54 0.075 0.100 D 0.84 0.99 0.033 0.039 F 0.20 0.30 0.008 0.012 G 0.76 0.14 0.030 0.045 K 7.24 8.13 0.285 0.320 L 10.54 11.43 0.415 0.450 NPN SILICON RF LOW POWER TRANSISTOR MRF837 DESCRIPTION: The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. FEATURES INCLUDE:
- ••• Min gain 8.0 dB @ 750 mW/870 MHz
- ••• Silicon Nitride passivated
- ••• Low cost Plastic Package MAXIMUM RATINGS IC 200 mA VCBO 36 V PDISS 1.0 W @ TC = 25 °C TJ -65 °Cto +150 °C TSTG -65 °Cto +150 °C θθθθJC 40 °C/W 1 = COLLECTOR 2 =EMITER 3 = BASE