MRF652S ASI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 16 V BVCES IC = 25 mA 36 V BVCBO IC = 25 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 15 V 1.0 mA hFE VCE = 5.0 V IC = 200 mA 10 150 --- Cob VCB = 15 V f = 1.0 MHz 9.5 15 pF PG ηηηηC VCC = 12.5 V P OUT = 5.0 W f = 512 MHz 10 dB NPN SILICON RF POWER TRANSISTOR MRF652S DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. FEATURES:

  • Common Emitter
  • PG = 10 dB at 5.0 W/512 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 36 V VCER 16 V VEBO 4.0 V PDISS 25 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 200 °C/W PACKAGE STYLE .280 4L PILL MINIMUM inches / mm .004 / 0.10 .275 / 6.99 .050 / 1.27 B C D E F A MAXIMUM .285 / 7.24 .060 . 1.52 .130 / 3.30 .006 / 0.15 inches / mm 1.055 / 26.80 DIM .118 / 3.00 D E F ØB ØC A C B E E