MRF616 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 36 V BVCEO IC = 50 mA 16 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V I C = 150 mA 20 --- COB VCB = 12.5 V f = 1.0 MHz 3.5 pF PG ηηηηC VCE = 12.5 V P OUT = 1.0 W f = 470 MHz 10 11 dB PACKAGE STYLE .280" 4L PILL NPN SILICON RF POWER TRANSISTOR MRF616 DESCRIPTION: The MRF616 is Designed for Common Emitter Class C Amplifier Applications in 12.5 Volt UHF Mobile Radios. FEATURES INCLUDE:
- ••• High Gain, 11 DB Typical
- ••• Gold Metallization
- ••• Emitter Ballasting MAXIMUM RATINGS IC 250 mA VCBO 36 V PDISS 5.0 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 35 O C/W MINIMUM inches / mm .004 / 0.10 .275 / 6.99 .050 / 1.27 B C D E F A MAXIMUM .285 / 7.24 .060 . 1.52 .130 / 3.30 .006 / 0.15 inches / mm 1.055 / 26.80 DIM .118 / 3.00 D E F ØB ØC A CB E E