MRF587 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 34 V BVCEO IC = 5.0 mA 17 V BVEBO IE = 100 µA 2.5 V ICBO VCB = 10 V 50 µA hFE VCE = 5.0 V IC = 50 mA 50 200 --- Ccb VCB = 10 V f = 1.0 MHz 1.7 2.2 pF GP ηηηηC VCC = 15 V IC = 90 mA f = 0.3 GHz dB NPN SILICON RF POWER TRANSISTOR MRF587 DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. FEATURES:
- PG = 16 dB Typical at 220 W/500 MHz
- Low Noise Figure
- Diffused Ballast Resistors
- Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 34 V VCEO 17 V VEBO 2.5 V PDISS 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C PACKAGE STYLE .280 4L STUD Lead 1 = Collector 2 & 3 = Emitter 4 = Base MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J 2 3