MRF586

MRF586 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TA = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 17 V BVCBO IC = 1.0 mA 34 V BVEBO IE = 100 µA 2.5 V ICBO VCB = 10 V 50 µµµµA hFE VCE = 5.0 V IC = 50 mA 50 200 --- ft VCE = 15 V IC = 90 mA f = 500 MHz 4500 MHz COB VCB = 10 V f = 1.0 MHz 2.2 pF NF VCE = 15 V IC = 90 mA f = 300 MHz 3.0 dB TB3 VCE = 15 V IC = 90 mA f = 500 MHz -65 dB DIN VCE = 15 V IC = 90 mA f = 500 MHz -120 dBµµµµV GUmax VCE = 15 V IC = 90 mA f = 500 MHz 14.5 dB NPN SILICON HIGH FREQUENCY TRANSISTOR MRF586 DESCRIPTION: The MRF586 is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. MAXIMUM RATINGS IC 200 mA VCE 17 V PDISS 2.5 W @ TC = 50 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 70 O C/W PACKAGE STYLE TO-39 Ø A Ø D 45° CB F E G H MINIMUM inches / mm .029 / 0.740 .335 / 8.510 .200 / 5.080 .028 / 0.720 .305 / 7.750 .240 / 6.100 B C D E F G A MAXIMUM .034 / 0.860 .335 / 8.500 .260 / 6.600 .370 / 9.370 inches / mm .045 / 1.140 .500 / 12.700 H .016 / 0.407 .020 / 0.508 DIM 1 = EMITTER 2 = BASE 3 = COLLECTOR(CASE)