MRF5812 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 30 V BVCEO IC = 5.0 mA 15 V BVEBO IE = 0.1 mA 2.5 V ICBO VCB = 15 V 0.1 mA IEBO VCE = 2.0 V 0.1 mA hFE VCE = 5.0 V IC = 50 mA 50 200 --- COB VCB = 10 V f = 1.0 MHz 1.4 2.0 pF FTAU VCE = 10 V IC = 75 mA f = 1.0 GHz 5.0 GHz NFmin GNF GU max MSG |S21|2 VCE = 10 V I C = 50 mA f = 500 MHz 2.0 15.5 17.8 3.0 dB dB dB dB NPN SILICON RF MICROWAVE TRANSISTOR MRF5812 PACKAGE STYLE SO-8 DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES:

  • Low Noise – 2.5 dB @ 500 MHz
  • Ftau – 5.0 GHz @ 10 V, 75 mA
  • Cost Effective SO-8 package MAXIMUM RATINGS IC 200 mA VCBO 30 V VCEO 15 V VEBO 2.5 V PDISS 1.25 W @ TC = 25 °C