MRF581 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 36 V BVCEO IC = 1.0 mA 18 V BVEBO IE = 100 µA 2.5 V IEBO VEB = 2.0 V 100 µA ICBO VCB = 15 V 100 µA hFE VCE = 5.0 V IC = 50 mA 50 200 --- Ccb VCB = 10 V f = 1.0 MHz 1.4 2.0 pF GP VCC = 10 V I C = 50 f = 0.5 GHz 13 15.5 dB NPN SILICON RF TRANSISTOR MRF581 DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. FEATURES:

  • Low Noise Figure
  • Low Intermodulation Distortion
  • High Gain
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = Emitter 2 = Collector 4 = Base