MRF572 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 12 V BVCBO IC = 100 µA 20 V ICBO VCB = 8.0 V 200 µµµµA BVEBO IE = 50 µA 1.5 V hFE VCE = 8.0 V IC = 10 mA 30 300 --- Ccb VCB = 8.0 V f = 1.0 MHz 0.25 pF ft VCE = 8.0 V IC = 25 mA f = 1.0 GHz 8.0 GHz ||||S21E||||2 VCE = 8.0 V IC = 25 mA f = 1.0 GHz f = 2.0 GHz 16.9 12.0 dB GNF VCE = 8.0 V IC = 0 mA f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz 10 16.5 12 dB NF VCE = 8.0 V IC = 0 mA f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz 1.0 1.5 2.5 2.0 dB SILICON NPN RF TRANSISTOR MRF572 DESCRIPTION: The MRF572 is Designed for Low Noise General Purpose VHF,UHF Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 60 mA VCE 12 V PDISS 500 mW @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C PACKAGE STYLE 100MIL CERAMIC STRIPLINE 1 = Collector 2 & 4 = Emitter 3 = Base