MRF571 ASI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 0.1 mA 20 V BVCEO IC = 1.0 mA 10 V BVEBO IE = 500 µA 2.5 V ICBO VCB = 8.0 V 10 µA hFE VCE = 5.0 V IC = 30 mA 50 300 --- Ccb VCB = 6.0 V f = 1.0 MHz 0.7 1.0 pF GNF VCE = 6.0 V I C = 10 mA f = 0.5 GHz f = 1.0 GHz 16.5 dB NF VCE = 6.0 V IC = 10 mA f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz 1.0 1.5 2.8 2.0 dB NPN SILICON RF TRANSISTOR MRF571 DESCRIPTION: The ASI MRF571 is Designed for low- noise, wide dynamic range front end amplifiers. Applications up to 2.0 GHz. FEATURES:

  • Low Noise Figure
  • High Gain
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 70 mA VCBO 20 V VCEO 10 V VEBO 3.0 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = Emitter 2 = Collector 4 = Base