MRF553 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 16 V BVCBO IC = 5.0 mA 36 V BVCES IC = 5.0 mA 36 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 15 V 5.0 mA hFE VCE = 5.0 V IC = 250 mA 30 200 --- CCB VCB = 10 V f = 1.0 MHz 12 20 pF GPE ηηηη ψψψψ VCE = 12 V POUT = 1.5 W f = 175 MHz 11.5 10:1 dB --- NPN SILICON RF TRANSISTOR MRF553 DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. FEATURES:

  • 12.5 V, 175 MHz.
  • POUT = 1.5 W
  • GP = 11.5 min.
  • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCB 36 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 41.7 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.45 5.21 .175 .205 B 1.91 2.54 .075 .100 C 0.84 0.99 .033 .039 D 2.46 2.64 .097 .104 E 8.84 9.73 .348 .383 F 0.20 0.31 .008 0.12 G 7.24 8.13 .285 .320 H 1.65 0.65 J 3.25 0.128 K 0.64 1.02 .025 0.40 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER