MRF517 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TA = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA RBE = 330 Ω 25 V BVCBO IC = 100 µA 35 V BVEBO IE = 100 µA 2.5 V ICBO VCB = 15 V 100 µµµµA hFE VCB = 10 V IC = 50 mA 40 200 --- ft VCB = 15 V IC = 50 mA f = 200 MHz 2700 MHz COB VCB = 10 V f = 1.0 MHz 3.0 pF GPE NF IP3 VCB = 15 V IC = 50 mA f = 500 MHz 11.5 4.0 +33 dB dB dBm NPN SILICON HIGH FREQUENCY TRANSISTOR MRF517 DESCRIPTION: The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range. MAXIMUM RATINGS IC 150 mA VCBO 35 V PDISS
2.5 W @ TC = 50
O C 20 mW/ O C @ TC = 50 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 50 O C/W PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR (CASE)