MRF466 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 35 V BVCES IC = 100 mA 65 V BVEBO IE = 1.0 mA 4.0 V ICES VE = 28 V 5 mA hFE VCE = 5.0 V IC = 0.5 A 10 80 --- Cob VCB = 28 V f = 1.0 MHz 125 200 pF GPE η IMD3 VCE = 28 V I CQ = 20 mA f = 30 MHz POUT = 40 W (PEP) -40 -30 dB dBc NPN SILICON RF POWER TRANSISTOR MRF466 DESCRIPTION: The ASI MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. FEATURES:

  • PG = 15 dB min. at 40 W/30 MHz
  • IMD3 = -30 dBc max. at 40 W (PEP)
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 6.0 A VCBO 65 V VCEO 35 V PDISS 175 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.0 °C/W PACKAGE STYLE .380 4L FLG MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 E E C B