MRF448 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 100 V BVCEO IC = 200 mA 50 V BVEBO IE = 10 mA 4.0 V ICEO VCE = 30 V 5 mA ICES VCE = 50 V 10 mA hFE VCE = 10 V IC = 5.0 A 10 --- Cob VCB = 50 V f = 1.0 MHz 350 450 pF GP ηC VCE = 50 V ICQ =250 mA POUT = 250 W(CW) dB IMD ηC VCE = 50 V ICQ =250 mA POUT = 250 W(PEP) -33 -30 dB NPN SILICON RF POWER TRANSISTOR MRF448 DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. FEATURES:

  • PG = 14 dB Typical at 220 W/30 MHz
  • IMD3 = -32 dBc Typ. at 220 W(PEP)
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 16 A VCBO 100 V VCEO 50 V VEBO 4.0 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.6 °C/W PACKAGE STYLE .500 4L FLG ORDER CODE: ASI10866 MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 E E C B