MRF428 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 110 V BVCES IC = 100 mA 110 V BVCEO IC = 100 mA 55 V BVEBO IE = 10 mA 4.0 V ICEO VCE = 30 V 5.0 mA ICES VCE = 60 V 5.0 mA hFE VCE = 6.0 V IC = 1.4 mA 18 43.5 --- Cob VCB = 50 V f = 1.0 MHz 200 pF GP IMD3 ηηηηC VCE = 50 V ICQ = 100 mA f = 30 MHz POUT = 150 W (PEP) -30 dB dBc NPN SILICON RF POWER TRANSISTOR MRF428 DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz FEATURES:
- PG = 14 dB min. at 150 W/30 MHz
- IMD3 = -30 dBc max. at 150 W(PEP)
- Omnigold™ Metalization System MAXIMUM RATINGS IC 10 A VCBO 110 V VCEO 55 V VEBO 4.0 V PDISS 233 W @ TC = 25 °C TJ -65 O C to +200 °C TSTG -65 O C to +150 °C θθθθJC 0.75 °C/W PACKAGE STYLE .500 4L FLG MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 E CE B