MRF427 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 100 mA 110 V BV CES IC = 100 mA 110 V BV CEO IC = 200 mA 65 V BV EBO IE = 10 mA 4.0 V hFE VCE = 5.0 V IC = 500 mA 15 90 --- C ob VCB = 50 V f = 1.0 MHz 60 pF G P IMD 3 VCE = 50 V POUT = 25 W (PEP) f = 30 MHz 18 20 - 37 -34 dB dBc NPN SILICON RF POWER TRANSISTOR MRF427 DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 MHz FEATURES:

  • PG = 18 dB min. at 25 W/30 MHz
  • IMD 3 = -34 dBc max. at 25 W(PEP)
  • Omnigold ™ Metalization System MAXIMUM RATINGS IC 6.0 A VCBO 110 V VCEO 65 V VEBO 4.0 V PDISS 80 W @ TC = 25 °C TJ -65 O C to +200 °C TSTG -65 O C to +150 °C θθθθJC 2.19 °C/W PACKAGE STYLE .500 4L FLG ORDER CODE: ASI10467 MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 E CE B