MRF422 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 100 mA 85 V BVCBO IC = 100 mA 85 V BVEBO IE = 10 mA 3.0 V ICES VCE = 28 V 20 mA hFE VCE = 5.0 V IC = 5.0 A 10 30 120 --- Cob VCB = 28 V f = 1.0 MHz 420 pF Pout VCE = 28 V f = 30 MHz 150 W(PEP) GPE ηηηη IMD VCC = 28 V I CQ = 150 mA P out = 150 W (PEP) IC(max) = 6.7 A f = 30 MHz 10 13 -33 dB dB NPN SILICON RF POWER TRANSISTOR MRF422/MP DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP. MAXIMUM RATINGS I 20 A V 40 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θθθθJC 0.6 °C/W PACKAGE STYLE .500 4L FLG 1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER