MRF421 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 20 V BVCES IC = 100 mA 45 V BVCBO IC = 100 mA 45 V BVEBO IE = 10 mA 4.0 V ICES VCE = 16 V 10 mA hFE VCE = 5.0 V IC = 5.0 A 10 200 --- COB VCB = 12.5 V f = 1.0 MHz 650 pF GP IMD3 ηηηηC VCE = 12.5 V I CQ = 150 mA f = 30 MHz VCE = 12.5 V ICQ = 150 mA POUT = 100 W -30 dB dBc NPN SILICON RF POWER TRANSISTOR MRF421 DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. FEATURES:
- PG = 12 dB min. at 100 W/30 MHz
- IMD3 = -30 dBc max. at 100 W(PEP)
- Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCBO 45 V VCEO 20 V VEBO 3.0 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.6 °C/W PACKAGE STYLE .500 4L FLG ORDER CODE: ASI10824 MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11