MRF406

MRF406 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 40 V BVCBO IC = 50 mA 40 V BVCEO IC = 50 mA 20 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 12.5 V 5.0 mA hFE IC = 1.0 A V CE = 5.0 V 10 35 --- Cob VCB = 12.5 V f = 1.0 MHz 200 pF Pout VCE = 12.5 V f = 30 MHz 20 W(PEP) GPE ηηηη IMD VCC = 12.5 V I C ≤ 1.75 A P out = 20 W (PEP) Icq = 25 mA f = 30, 30.001 MHz -30 dB dB ψψψψ VCC = 12.5 V I C ≤ 1.75 A P out = 20 W (PEP) Icq = 25 mA f = 30, 30.001 MHz >30:1 ALL PHASE ANGLES NPN SILICON RF POWER TRANSISTOR MRF406 DESCRIPTION: The MRF406 is Designed for

12.5 V 30 MHz Power Amplifier

Applications. FEATURES INCLUDE:

• Common Emitter
• Output Power = 20 W (PEP) MAXIMUM RATINGS IC 4.0 A VCE 20 V VCB 40 V PDISS 80 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 2.2 O C/W PACKAGE STYLE .380" 4L FLG MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 C B E E