MRF392 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 30 V BVCES IC = 50 mA 60 V BVEBO IE = 5.0 Ma 4.0 V ICBO VCB = 30 V 5.0 mA Cob VCB = 28 V f = 1.0 MHz 52 pF hFE VCE = 5.0 V IC = 1.0 A 20 100 --- Gpe ηηηηc VCE = 28 V P out = 125 W f = 400 MHz 8.0 8.5 dB NPN SILICON RF POWER TRANSISTOR MRF392 DESCRIPTION: The ASI MRF392 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 300 - 500 MHz Military Communications Band. FEATURES INCLUDE:
- Gold Metalization
- Emitter Ballasting
- Input Matching MAXIMUM RATINGS IC 16 A VCB 60 V PDISS 270 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -55 °C to +200 °C θθθθJC .65 °C/W PACKAGE STYLE .400 8L FLG MINIMUM inches / mm .115 / 2.92 .065 / 1.65 .380 / 9.65 B C D E F G A MAXIMUM .125 / 3.18 .390 / 9.91 .075 / 1.91 inches / mm H .645 / 16.38 .655 / 16.64 DIM K L I J .895 / 22.73 .420 / 10.67 .120 / 3.05 .905 / 22.99 .430 / 10.92 .130 / 3.30 O N M .395 / 10.03 .159 / 4.04 .405 / 10.29 .175 / 4.45 .280 / 7.11 .130 / 3.30 D K E .125 F G .1925 J I H N L M 4 x .060 R FULL R AB C O .360 / 9.14 .030 / 0.76 .735 / 18.67 .765 / 19.43 1 1 2 2 2 2 3 3 1 = COLLECTOR 2 = EMITTER 3 = BASE