MRF329 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 80 mA 60 V BVCES IC = 80 mA 60 V BVCEO IC = 80 mA 30 V BVEBO IE = 8.0 mA 4.0 V ICBO VCB = 30 V 5.0 mA hFE VCE = 5.0 V IC = 4.0 A 20 80 --- Cob VCB = 28 V f = 1.0 MHz 95 125 pF GPE ηηηη VCC = 28 V P out = 100 W f = 400 MHz 7.0 9.7 dB ψψψψ VCC = 28 V P out = 100 W f = 400 MHz VSWR = 3:1 ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER NPN SILICON RF POWER TRANSISTOR MRF329 DESCRIPTION: The ASI MRF329 is Designed for Wide Band Large-Signal Output and Driver Amplifier Stages in the 100-500 MHz Frequency Range. FEATURES INCLUDE:

  • Gold Metalization
  • 3:1 VSWR
  • I/O Network Matching MAXIMUM RATINGS IC

9.0 A (CONT)

12.0 A (PEAK)

PDISS 270 W @ TC = 25 O C TJ -65 O C to +150 O C TSTG -65 O C to +150 O C θθθθJC 0.65 O C/W PACKAGE STYLE .400X.425" 6L FLG. 1 & 3 = EMITTER 2 = COLLECTOR 4 = BASE