MRF323 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 60 V BVCES IC = 20 mA 60 V BVCEO IC = 20 mA 33 V BVEBO IE = 2.0 mA 4.0 V ICBO VCB = 30 V 2.0 mA hFE IC = 1.0 A V CE = 5.0 V 20 80 --- Cob VCB = 28 V f = 1.0 MHz 20 24 pF GPE ηηηη VCC = 28 V P out = 20 W f = 400 MHz dB ψψψψ VCC = 28 V P out = 20 W f = 400 MHz VSWR = 30:1 ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER NPN SILICON RF POWER TRANSISTOR MRF323 DESCRIPTION: The MRF323 is Designed for Wide Band Large-Signal Driver and Predriver Applications in the 200 to 500 MHz Range. FEATURES INCLUDE:
- Gold Metalization
- 30:1 VSWR MAXIMUM RATINGS IC
2.2 A (CONT)
3.0 A (PEAK)
PDISS 55 W @ TC = 25 O C TSTG -65 O C to +150 O C θθθθJC 3.2 O C/W PACKAGE STYLE .280" 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J C B EE