MRF321 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV EBO IE = 20 mA 4.0 V BV CES IC = 20 mA 33 V ICBO VCB = 30 V 1.0 mA hFE VCE = 5.0 V IC = 0.5 A 25 80 --- C OB VCB = 28 V f = 860 MHz 15 pF PG ηηηηD VCC = 28 V POUT = 10 W f = 400 MHz10 dB NPN SILICON RF POWER TRANSISTOR MRF321 DESCRIPTION: The ASI MRF321 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES:

  • Class C Operation
  • PG = 10 dB at 10 W/400 MHz
  • Omnigold ™ Metalization System MAXIMUM RATINGS IC 1.1 A VCBO 60 V VCEO 33 V VEBO 4.0 V PDISS 27 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 8.0 O C/W PACKAGE STYLE .280 4L STUD ORDER CODE: ASI10694 MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J C B EE