MRF317

MRF317 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 65 V BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 35 BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 5.0 mA hFE VCE = 5.0 V IC = 5.0 A 10 80 --- COB VCB = 28 V f = 1.0 MHz 250 pF PG ηηηηC VCE = 28 V POUT = 100 W f = 150 MHz 9.0 dB NPN SILICON RF POWER TRANSISTOR MRF317 DESCRIPTION: The ASI MRF317 is Designed for Class C, 28 V High Band Applications up to 200 MHz. FEATURES:

• Internal Input Matching Network
• PG = 9.0 dB at 100 W/150 MHz
• Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCBO 65 V VCEO 36 V VCES 65 V VEBO 4.0 V PDISS 270 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.65 °C/W PACKAGE STYLE .500 6L FLG 1 = Collector 2 = Base 3&4 = Emitter MINIMUM inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 B C D E F G A MAXIMUM .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 H DIM K L I J .970 / 24.64 .980 / 24.89 .170 / 4.32 N M .125 / 3.18 .285 / 7.24 .150 / 3.81 .045 / 1.14 E F .725/18,42 I G J K L M A D C B 2x ØN FULL R H .835 / 21.21 .865 / 21.97