MRF314A ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VE = 28 V 2.0 mA hFE VCE = 5.0 V IC = 200 mA 5 --- --- COB VCB = 28 V f = 1.0 MHz 50 pF 13.5 dB PG ηηηηC ψψψψ VCC = 28 V POUT = 30 W f = 150 MHz 30:1 minimum without degration in output power NPN SILICON RF POWER TRANSISTOR MRF314A DESCRIPTION: The MRF314A is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES:

  • PG = 10 dB min. at 30 W/ 150 MHz
  • Withstands 30:1 Load VSWR
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS 60 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 2.9 O C/W PACKAGE STYLE .380 4L STUD ORDER CODE: ASI10770 MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A C B EE