MRF314 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 30 mA 35 V BVCES IC = 30 mA 65 V BVEBO IE = 3.0 mA 4.0 V ICBO VE = 30 V 3.0 mA hFE VCE = 5.0 V IC = 1.5 A 20 80 --- COB VCB = 30 V f = 1.0 MHz 30 40 pF 13.5 dB PG ηηηηC ψψψψ VCC = 28 V POUT = 30 W f = 150 MHz 30:1 all phase angles, no degadation in output. NPN SILICON RF POWER TRANSISTOR MRF314 DESCRIPTION: The MRF314 is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES:

  • PG = 10 dB min. at 30 W/ 150 MHz
  • Withstands 30:1 Load VSWR
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 3.4 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS 82 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 2.13 °C/W PACKAGE STYLE .380 4L FLG ORDER CODE: ASI10872