MRF313 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 30 V BVCBO IC = 0.1 mA 35 V BVEBO IE = 1.0 mA 3.0 V ICEO VE = 20 V 1.0 mA hFE VCE = 10 V IC = 100 mA 20 150 --- COB VCB = 28 V f = 1.0 MHz 3.5 5.0 pF PG ηηηηC VCC = 28 V POUT = 1.0 W f = 400 MHz dB NPN SILICON RF TRANSISTOR MRF313 DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. FEATURES:

  • PG = 15 dB min. at 1.0 W/ 400 MHz
  • Common Emitter for Improved Stability
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VCBO 40 V VCEO 30 V VEBO 3.0 V PDISS 6.1 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθθθJC 28.5 OC/W PACKAGE STYLE .200" 4L PILL