MRF237 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS T C = 25 °C TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO I C = 10 mA 18 V BV CES I C = 5.0 mA 36 V BV EBO I C = 1.0 mA 4.0 V I CBO V CE = 15 V .25 mA h FE V CE = 5.0 V I C = 250 mA 5.0 --- C OB V CB = 15 V f = 1.0 MHz 15 20 pF G PE ηηηη V CC = 12.5 V P OUT = 4.0 W f = 175 MHz dB SILICON NPN RF POWER TRANSISTOR MRF237 DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to
225 MHz
I C 1.0 A V CBO 36 V V CEO 18 V P DISS
8.0 W @ T
C = 25 °C T J -65 °C to +200 °C T STG -65 °C to +200 °C θθθθ JC 22 °C/W PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR