MRF227 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. -
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 50 mA 36 V BVEBO IC = 1.0 mA 4.0 V ICBO VCE = 15 V 1.0 mA HFE VCE = 5.0 V IC = 100 mA 20 200 --- COB VCB = 12.5 V f = 1.0 MHz 15 Pf GPE POUT = 3.0 W VCE = 12.5 V f = 225 MHz 13.5 15 dB ηηηη POUT = 3.0 W VCE = 12.5 V f = 225 MHz 60 % SILICON NPN RF POWER TRANSISTOR MRF227 DESCRIPTION: The MRF227 is designed for large signal power amplifier applications operating to
225 MHz
IC 0.6 A VCB 36 V VCE 16 V PDISS 8 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR