MRF141G ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS / EACH SIDE TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 100 mA 65 V IDSS VDS = 28 V V GS = 0 V 5.0 mA IGSS VDS = 0 V V GS = 20 V 1.0 µµµµA VGS(th) ID = 100 mA V DS = 10 V 1.0 5.0 V VDS(on) ID = 10 A V GS = 10 V 1.5 V gfs ID = 5.0 A V DS = 10 V 5.0 mhos Ciss Coss Crss VDS = 28 V V GS = 0 V f = 1.0 MHz 350 420 pF Gps push-pull VDD = 28 V I DQ = 500 mA Pout = 300 W f = 175 MHz 12 dB ηηηη push-pull VDD = 28 V I D(max) = 21.4 A Pout = 300 W f = 175 MHz 45 % ψψψψ push-pull VDD = 28 V I DQ = 500 mA P out = 300 W f = 175 MHz VSWR = 5:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER RF FIELD-EFFECT POWER TRANSISTOR MRF141G DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for
175 MHz, 300 W Transmitter and
Amplifier Applications. MAXIMUM RATINGS ID 32 A VDSS 65 V VGS ±40 V PDISS 500 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 0.35 O C/W PACKAGE STYLE .385X.850 4LFG 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE