MRF136

MRF136 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS ID = 5.0 mA V GS = 0 V 65 V IDSS VDS = 28 V V GS = 0 V 2.0 mA IGSS VDS = 0 V V GS = 40 V 1.0 µµµµA VGS(th) ID = 25 mA V DS = 10 V 1.0 3.0 6.0 V gfs ID = 250 mA V DS = 10 V 250 400 mmhos Ciss Coss Crss VDS = 28 V V GS = 0 V f = 1.0 MHz 5.5 25 pF NF VDS = 28 V I D = 0.5 A f = 150 MHz 1.0 dB Gps ηηηη VDD = 28 V P out = 15 W f = 150 MHz IDQ = 25 mA dB ψψψψ VDD = 28 V P out = 15 W f = 150 MHz IDQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER RF POWER FIELD-EFFECT TRANSISTOR MRF136 DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz. MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3 & 4 = SOURCE