MRF1090MB ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 25 mA R BE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCB = 50 V 100 mA hFE VCE = 5.0 V IC = 1.0 A 10 200 --- COB VCE = 50 V f = 1.0 MHz 40 pF PG ηηηηC VCC = 50 V P OUT = 90 W f = 1025 - 1150 MHz PIN = 13 W 8.4 dB Pulse with = 10 µS, Duty Cycle = 1.0 % NPN SILICON RF POWER TRANSISTOR MRF1090MB DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES:
- Internal Input Matching Network
- PG = 8.4 dB at 90 W/1150 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 1.0 A PEAK VCB 55 V PDISS 292 W @ 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.6 °C/W PACKAGE STYLE .280 4L PILL (A) MINIMUM inches / mm .004 / 0.10 1.000 / 25.40 .050 / 1.27 B C D E F A MAXIMUM .065 / 1.65 .145 / 3.68 .007 / 0.18 inches / mm .205 / 5.21 DIM F E A .100x45° D B C ØG G .275 / 6.99 .285 / 7.21 .195 / 4.95