MRF1035MB ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 60 V BVCES IC = 20 mA 60 V BVEBO IE = 2.0 mA 4.0 V ICBO VCE = 50 V 2.0 mA hFE VCE = 5.0 V IC = 500 mA 10 100 --- Cob VCB = 50 V f = 1.0 MHz 10 15 pF PG ηηηηC VCC = 50 V P OUT = 35 W f = 1090 MHz 10 12.4 dB NPN SILICON RF POWER TRANSISTOR MRF1035MB DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES:
- Internal Input Matching Network
- PG = 10 dB at 35 W/1090 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 60 V VCES 60 V PDISS 35 W PEAK TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 5.0 °C/W PACKAGE STYLE .280 4L PILL (A) MINIMUM inches / mm .004 / 0.10 1.000 / 25.40 .050 / 1.27 B C D E F A MAXIMUM .065 / 1.65 .145 / 3.68 .007 / 0.18 inches / mm .205 / 5.21 DIM F E A .100x45° D B C ØG G .275 / 6.99 .285 / 7.21 .195 / 4.95 C B B E