MRF10350 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 60 mA 65 V BVCES IC = 60 mA 65 V BVEBO IE = 10 mA 3.5 V ICBO VCE = 36 V 25 mA hFE VCE = 5.0 V IC = 5.0 A 20 --- PG ηηηηC VCC = 50 V P OUT = 350 W f = 1090 MHz 8.5 9.0 dB NPN SILICON RF POWER TRANSISTOR MRF10350 DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES:
- Internal Input Matching Network
- PG = 8.5 dB at 350 W/1090 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 31 A VCBO 65 V VCES 65 V PDISS 1590 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 0.11 °C/W PACKAGE STYLE .400 2NL FLG C B B E MINIMUM inches / mm .100 / 2.54 .110 / 2.79 .376 / 9.55 .395 / 10.03 B C D E F G A MAXIMUM .396 / 10.06 .407 / 10.34 .130 / 3.30 inches / mm .450 / 11.43 H DIM K L I J .640 / 16.26 .890 / 22.61 .004 / 0.10 .660 / 16.76 .910 / 23.11 .007 / 0.18 H F C E N ØD M G 4x .062 x 45° P L K I J 2X B .025 x 45° A N M .193 / 4.90 .125 / 3.18 .395 / 10.03 .415 / 10.54 P .230 / 5.84