MRF1002MB ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 20 V BVCBO IC = 5.0 mA 50 V BVCES IC = 5.0 mA 50 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 35 V 0.5 mA hFE VCE = 5.0 V IC = 100 A 10 100 --- COB VCB = 35 V f = 1.0 MHz 2.5 5.0 pF PG ηC VCC = 35 V POUT = 2.0 W f = 1090 MHz 10 dB NPN SILICON RF POWER TRANSISTOR MRF1002MB DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES:
- Class C Operation
- PG = 9.0 dB at 2.0 W/1150 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 250 mA VCEO 20 V VCBO 50 V PDISS 7.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 25 °C/W PACKAGE STYLE .280 4L PILL (A) 1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE MINIMUM inches / mm .004 / 0.10 1.000 / 25.40 .050 / 1.27 B C D E F A MAXI MUM .065 / 1.65 .145 / 3.68 .007 / 0.18 inches / mm .205 / 5.21 DIM F E A .100x45° D B C ØG G .275 / 6.99 .285 / 7.21 .195 / 4.95