MRF1001A ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 20 V BVCBO IC = 1.0 mA 30 V BVEBO IC = 100 µA 3.5 V ICBO VCB = 10 V 50 µA IEBO VEB = 3.5 V 100 µA hFE VCE = 5.0 V IC = 50 mA 50 300 --- VCE(SAT) IC = 50 mA IB = 10 mA 100 V ft VCE = 14 V IC = 90 mA f = 300 MHz 3.0 GHz GUmax MAG |S21|2 VCC = 14 V I C = 90 mA Pout = 1.0 W f = 300 MHz 11.5 11.7 11.13 dB dB dB NPN SILICON HIGH FREQUENCY TRANSISTOR MRF1001A DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 175 °C/W PACKAGE STYLE TO-39 1 = Emitter 2 = Base 3 = Collector