MRF1000MB ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 28 V 1.0 mA hFE VCE = 5.0 V IC = 100 mA 15 120 --- PG VCC = 18 V P OUT = 0.2 W f = 1090 MHz 10 dB NPN SILICON RF POWER TRANSISTOR MRF1000MB DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES:
- Class A Operation
- PG = 10 dB at 0.2 W/1090 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 7.0 W TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 25.0 O C/W PACKAGE STYLE .280 4L PILL MINIMUM inches / mm .004 / 0.10 .275 / 6.99 .050 / 1.27 B C D E F A MAXIMUM .285 / 7.24 .060 . 1.52 .130 / 3.30 .006 / 0.15 inches / mm 1.055 / 26.80 DIM .118 / 3.00 D E F ØB ØC A E E C B