MRA1417-11 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 80 mA V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 28 V 2.0 mA hFE VCE = 5.0 V IC = 4.0 A 100 --- Cob VCB = 28 V f = 1.0 MHz pF PG ηC VCE = 28 V POUT = 11 W f = 1700 MHz 7.4 dB NPN SILICON RF POWER TRANSISTOR MRA1417-11 PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER DESCRIPTION: The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE:
- Gold Metallization
- Emitter Ballasting
- Input Matching MAXIMUM RATINGS IC 4.0 A VCBO 50 V PDISS
12 W @ TC = 25 °C
-65 °C to +200 °C TSTG -65 °C to +200 °C θJC 4.5 °C/W