MRA1014-35 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 50 V BVEBO IE = 2.5 mA 3.5 V ICBO VCB = 28 V 5.0 mA hFE VCE = 5.0 V IC = 1.0 A 10 100 --- Cob VCB = 28 V f = 1.0 MHz 24 pF GPB ηηηηc VCE = 28 V P out = 35 W f = 1.0 GHz & 1.4 GHz 7.0 dB NPN SILICON RF POWER TRANSISTOR MRA1014-35 DESCRIPTION: The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. FEATURES:
- Diffused Ballast Resistors.
- Internal Matching Network
- Omnigold™ Metalization System MAXIMUM RATINGS IC 5.0 A (CONT) VCES 50 V VEBO 3.5 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 2.5 °C/W PACKAGE STYLE .320 SQ 2L FLG C E B