MRA0610-23 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 150 mA 50 V BVEBO IE = 2.0 mA 3.5 V ICBO VCB = 28 V 3.0 mA hFE VCE = 5.0 V IC = 750 mA 10 100 --- Cob VCB = 28 V f = 1.0 MHz 21 pF GPB ηc VCE = 28 V P out = 23 W f = 600 MHz & 1.0 GHz 7.0 dB NPN SILICON RF POWER TRANSISTOR MRA0610-23 DESCRIPTION: The MRA0610-23 is designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. MAXIMUM RATINGS IC 3.5 A (CONT) VCES 50 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.0 °C/W PACKAGE STYLE .320 2L FLG 1= COLLECTOR 2= BASE 3= EMITTER