MRA0610-18A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 50 V BVEBO IE = 1.25 mA 3.5 V ICBO VCB = 28 V 5.0 mA hFE VCE = 5.0 V IC = 500 mA 10 100 --- Cob VCB = 28 V f = 1.0 MHz 28 pF GPB ηc VCE = 28 V P out = 18 W f = 600 MHz & 1.0 GHz 7.0 dB NPN SILICON RF POWER TRANSISTOR MRA0610-18A DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. MAXIMUM RATINGS IC 5.0 A (CONT) VCES 50 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.5 °C/W PACKAGE STYLE MRA .25 MILLIMETERS INCHES DIM MIN MAX MIN MAX A 8.00 8.38 O.351 0.330 B 0.08 0.15 0.003 0.006 C 1.98 2.34 0.078 0.092 D 1.40 1.65 0.055 0.065 E 4.32 5.08 0.170 0.200 F 18.77 19.03 0.739 0.749 G 5.33 5.84 0.210 0.230 H 6.17 6.43 0.243 0.253 J 7.74 8.64 0.210 0.240 K 14.10 14.35 0.555 0.565 L 3.17 3.43 0.125 0.135 2 = Collector 1 = Emitter 3 = Base