MRA0510-50H ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 25 mA 60 V BVCBO IC = 25 mA 60 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V 25 mA hFE VCE = 5.0 V IC = 1.0 A 20 80 --- Cob VCB = 28 V f = 1.0 MHz 24 pF GPB VSRW VCE = 28 V P out = 50 W f = 1.0 GHz ICQ = 2 X 120 mA 7.0 5:1 dB --- NPN SILICON RF POWER TRANSISTOR MRA0510-50H DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES:
- Omnigold™ Metalization System
- Diffused Ballast Resistors.
- Internal Matching Network MAXIMUM RATINGS VCEO 30 V VCBO 60 V VEBO 4.0 V PDISS 125 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 1.4 OC/W PACKAGE STYLE .400 4L FLG. FLANGE CB E E B C