MR25H128A

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MR25H128A EVERSPIN | Alldatasheet

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Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A INTRODUCTION The MR25H128A is a 128Kbit magnetoresistive random access memory (MRAM) device orga- nized as 16,384 words of 8 bits. The MR25H128A offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memo- ry with no delay between writes. The MR25H128A is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. The MR25H128A is available in a 5 mm x 6 mm 8-pin DFN Small Flag package compatible with serial EE- PROM, Flash, and FeRAM products. The MR25H128A provides highly reliable data storage over a wide range of temperatures. The product is offered with industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) and AEC-Q100 Grade 3 (-40° to +85 °C) operating temperature range options. 128Kb Serial SPI MRAM

FEATURES

No write delays
Unlimited write endurance
Data retention greater than 20 years
Automatic data protection on power loss
Block write protection
Fast, simple SPI interface with up to 40 MHz clock rate
2.7 to 3.6 Volt power supply range
Low current sleep mode
Industrial and Automotive temperatures
Available in 8-pin DFN Small Flag RoHS-compliant package.
Direct replacement for serial EEPROM, Flash, FeRAM
Industrial Grade and AEC-Q100 Grade 1 and Grade 3 options
Moisture Sensitivity MSL-3

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A Signal Name Pin I/O Function Description CS 1 Input Chip Select An active low chip select for the serial MRAM. When chip select is high, the memory is powered down to minimize standby power, inputs are ignored and the serial output pin is Hi-Z. Multiple serial memories can share a com- mon set of data pins by using a unique chip select for each memory. SO 2 Output Serial Output The data output pin is driven during a read operation and remains Hi-Z at all other times. SO is Hi-Z when HOLD is low. Data transitions on the data output occur on the falling edge of SCK. WP 3 Input Write Protect A low on the write protect input prevents write operations to the Status Register. VSS 4 Supply Ground Power supply ground pin. SI 5 Input Serial Input All data is input to the device through this pin. This pin is sampled on the rising edge of SCK and ignored at other times. SI can be tied to SO to create a single bidirectional data bus if desired. SCK 6 Input Serial Clock Synchronizes the operation of the MRAM. The clock can operate up to 40 MHz to shift commands, address, and data into the memory. Inputs are captured on the rising edge of clock. Data outputs from the MRAM occur on the falling edge of clock. The serial MRAM supports both SPI Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1). In Mode 0, the clock is normally low. In Mode 3, the clock is normally high. Memory operation is static so the clock can be stopped at any time. HOLD 7 Input Hold A low on the Hold pin interrupts a memory operation for another task. When HOLD is low, the current operation is suspended. The device will ignore transitions on the CS and SCK when HOLD is low. All transitions of HOLD must occur while CS is low. VDD 8 Supply Power Supply Power supply voltage from +2.7 to +3.6 volts. CS SO WP V V HOLD SCK SI 5SS DD Table 1.1 Pin Functions Figure 1.3 Pin Diagrams (Top View) 8-Pin DFN Small Flag Package DEVICE PIN ASSIGNMENT

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A 2. SPI COMMUNICATIONS PROTOCOL Instruction Description Binary Code Hex Code Address Bytes Data Bytes WREN Write Enable 0000 0110 06h 0 0 WRDI Write Disable 0000 0100 04h 0 0 RDSR Read Status Register 0000 0101 05h 0 1 WRSR Write Status Register 0000 0001 01h 0 1 READ Read Data Bytes 0000 0011 03h 2 1 to ∞ WRITE Write Data Bytes 0000 0010 02h 2 1 to ∞ SLEEP Enter Sleep Mode 1011 1001 B9h 0 0 WAKE Exit Sleep Mode 1010 1011 ABh 0 0 Table 2.1 Command Codes Status Register and Block Write Protection The status register consists of the 8 bits listed in table 2.2. Status register bits BP0 and BP1 define the mem- ory block arrays that are protected as described in table 2.3. The Status Register Write Disable bit (SRWD) is used in conjunction with bit 1 (WEL) and the Write Protection pin (WP) as shown in table 2.4 to enable writes to status register bits. The fast writing speed of MR25H128A does not require write status bits. The state of bits 6,5,4, and 0 can be user modified and do not affect memory operation. All bits in the status register are pre-set from the factory to the “0” state. Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 SRWD Don’t Care Don’t Care Don’t Care BP1 BP0 WEL Don’t Care Table 2.2 Status Register Bit Assignments MR25H128A can be operated in either SPI Mode 0 (CPOL=0, CPHA =0) or SPI Mode 3 (CPOL=1, CPHA=1). For both modes, inputs are captured on the rising edge of the clock and data outputs occur on the falling edge of the clock. When not conveying data, SCK remains low for Mode 0; while in Mode 3, SCK is high. The memory determines the mode of operation (Mode 0 or Mode 3) based upon the state of the SCK when CS falls. All memory transactions start when CS is brought low to the memory. The first byte is a command code. De- pending upon the command, subsequent bytes of address are input. Data is either input or output. There is only one command performed per CS active period. CS must go inactive before another command can be accepted. To ensure proper part operation according to specifications, it is necessary to terminate each access by raising CS at the end of a byte (a multiple of 8 clock cycles from CS dropping) to avoid partial or aborted accesses.

0 X X Protected Protected Protected

1 0 X Protected Writable Writable 1 1 Low Protected Writable Protected 1 1 High Protected Writable Writable Table 2.4 Memory Protection Modes Status Register Memory Contents BP1 BP0 Protected Area Unprotected Area 0 0 None All Memory 0 1 Upper Quarter Lower Three-Quarters 1 0 Upper Half Lower Half 1 1 All None Table 2.3 Block Memory Write Protection Read Status Register (RDSR) The Read Status Register (RDSR) command allows the Status Register to be read. The Status Register can be read at any time to check the status of write enable latch bit, status register write protect bit, and block write protect bits. For MR25H128A, the write in progress bit (bit 0) is not written by the memory because there is no write delay. The RDSR command is entered by driving CS low, sending the command code, and then driving CS high. Figure 2.1 RDSR When WEL is reset to 0, writes to all blocks and the status register are protected. When WEL is set to 1, BP0 and BP1 determine which memory blocks are protected. While SRWD is reset to 0 and WEL is set to 1, status register bits BP0 and BP1 can be modified. Once SRWD is set to 1, WP must be high to modify SRWD, BP0 and BP1. SCK SI SO CS Status Register Out High Impedance High Z Mode 3 Mode 0 10 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 0 0 0 0 1 0 1 MSB MSB 7 6 5 4 3 2 1 0

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A SPI COMMUNICATIONS PROTOCOL Write Data Bytes (WRITE) The Write Data Bytes (WRITE) command allows data bytes to be written starting at an address specified by the 16-bit address. Only address bits 0-13 are decoded by the memory. The data bytes are written sequen- tially in memory until the write operation is terminated by bringing CS high. The entire memory can be written in a single command. The address counter will roll over to 0000h when the address reaches the top of memory. Unlike EEPROM or Flash Memory, MRAM can write data bytes continuously at its maximum rated clock speed without write delays or data polling. Back to back WRITE commands to any random location in mem- ory can be executed without write delay. MRAM is a random access memory rather than a page, sector, or block organized memory making it ideal for both program and data storage. The WRITE command is entered by driving CS low, sending the command code, and then sequential write data bytes. Writes continue as long as the memory is clocked. The command is terminated by bringing CS high. Figure 2.6 WRITE SCK SI SO CS 16-Bit Address High Impedance Instruction (02h) 0 0 0 0 0 0 1 0 X 3 2 1 0 7 6 5 4 3 2 1 0 MSB MSB 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31 X 13 Data Byte 1 X = Don’t Care SCK SI SO CS Data Byte 3 High Impedance Data Byte NData Byte 2 34 2 1 0 7 6 5 4 3 2 1 0 MSB 7 6 5 4 3 2 1 0 7 6 5 MSB 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Mode 3 Mode 0

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A 3. ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits. The device also contains protection against external magnetic fields. Precautions should be taken to avoid application of any magnetic field more intense than the field intensity specified in the maximum ratings. Symbol Parameter Conditions Value Unit VDD Supply voltage 2 All -0.5 to 4.0 V VIN Voltage on any pin 2 All -0.5 to VDD + 0.5 V IOUT Output current per pin All ±20 mA TBIAS Temperature under bias Industrial -45 to 95 °C AEC-Q100 Grade 3 -45 to 95 °C AEC-Q100 Grade 1 -45 to 135 °C Tstg Storage Temperature All -55 to 150 °C TLead Lead temperature during solder (3 minute max) All 260 °C Hmax_write Maximum magnetic field (Write) During Write 12,000 A/m Hmax_read Maximum magnetic field (Read or Standby) During Read or Standby 12,000 A/m 1 Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera- tion should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic fields could affect device reliability. 2 All voltages are referenced to VSS. The DC value of VIN must not exceed actual applied VDD by more than 0.5V. The AC value of VIN must not exceed applied VDD by more than 2V for 10ns with IIN limited to less than 20mA. 3 Power dissipation capability depends on package characteristics and use environment. Table 3.1 Absolute Maximum Ratings 1

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A Symbol Parameter Grade Min Typical Max Unit VDD Power supply voltage Industrial 2.7 - 3.6 V AEC-Q100 Grade 3 2.7 - 3.6 AEC-Q100 Grade1 3.0 - 3.6 V VIH Input high voltage All 2.2 - VDD + 0.3 V VIL Input low voltage All -0.5 - 0.8 V TA Temperature under bias Industrial -40 - 85 °C AEC-Q100 Grade 3 -40 - 85 °C AEC-Q100 Grade 1 1 -40 - 125 °C Note 1: AEC-Q100 Grade 1 temperature profile assumes 10 percent duty cycle at maximum temperature (2 years out of 20-year life.) Table 3.2 Operating Conditions ELECTRICAL SPECIFICATIONS Symbol Parameter Conditions Min Typical Max Unit ILI Input leakage current All - - ±1 μA ILO Output leakage current All - - ±1 μA VOL Output low voltage IOL = +4 mA - - 0.4 V IOL = +100 μA - - VSS + 0.2v V VOH Output high voltage IOH = -4 mA 2.4 - - V IOH = -100 μA VDD - 0.2 - - V Table 3.3 DC Characteristics Table 3.4 Power Supply Characteristics Symbol Parameter Conditions Typical Max Unit IDDR Active Read Current @ 1 MHz 2.5 3 mA @ 40 MHz 6 10 mA IDDW Active Write Current @ 1 MHz 8 13 mA @ 40 MHz 23 27 mA ISB Standby Current CS High 1 90 115 μA IZZ Standby Sleep Mode Current CS High 7 30 μA 1 ISB current is specified with CS high and the SPI bus inactive.

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A TIMING SPECIFICATIONS Power-Up Timing The MR25H128A is not accessible for a start-up time, tPU= 400 μs after power up. Users must wait this time from the time when VDD (min) is reached until the first CS low to allow internal voltage references to become stable. The CS signal should be pulled up to VDD so that the signal tracks the power supply during power-up sequence. Symbol Parameter Min Typical Max Unit VWI Write Inhibit Voltage 2.2 - 2.7 V tPU Startup Time 400 - - μs Table 4.3 Power-Up VDD VDD V (max) VDD(min) WI t PU Time Normal Operation Chip Selection not allowed Reset state of the device Figure 4.3 Power-Up Timing

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A TIMING SPECIFICATIONS Over the Operating Temperature Range and CL= 30 pF Symbol Parameter Min Max Unit fSCK SCK Clock Frequency 0 40 MHz tRI Input Rise Time - 50 ns tRF Input Fall Time - 50 ns tWH SCK High Time 11 - ns tWL SCK Low Time 11 - ns Synchronous Data Timing (See figure 4.4) tCS CS High Time 40 - ns tCSS CS Setup Time 10 - ns tCSH CS Hold Time 10 - ns tSU Data In Setup Time 5 - ns tH Data In Hold Time 5 - ns tV Output Valid Industrial Grade VDD = 2.7 to 3.6v. 0 10 ns VDD = 3.0 to 3.6v. 0 9 ns AEC Q-100 Grade 3 VDD = 2.7 to 3.6v. 0 10 ns VDD = 3.0 to 3.6v. 0 9 ns AEC Q-100 Grade 1 VDD = 3.0 to 3.6v. 0 10 ns Table continues next page. Table 4.4 AC Timing Parameters Synchronous Data Timing

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A Symbol Parameter Min Max Unit tHO Output Hold Time 0 - ns HOLD Timing (See figure 4.5) tHD HOLD Setup Time 10 - ns tCD HOLD Hold Time 10 - ns tLZ HOLD to Output Low Impedance - 20 ns tHZ HOLD to Output High Impedance - 20 ns Other Timing Specifications tWPS WP Setup To CS Low 5 - ns tWPH WP Hold From CS High 5 - ns tDP Sleep Mode Entry Time 3 - μs tRDP Sleep Mode Exit Time 400 - μs tDIS Output Disable Time 12 - ns Table 4.4 (Cont’d) AC Timing Parameters

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A 5. ORDERING INFORMATION Figure 5.1 Product Part Number Decoder Table Grade Temperature Package Shipping Container Order Part Number Industrial -40 to +85 C 8-DFN Small Flag Trays MR25H128ACDF Tape and Reel MR25H128ACDFR AEC-Q100 Grade 3 -40 to +85 C 8-DFN Small Flag Trays MR25H128APDF Tape and Reel MR25H128APDFR AEC-Q100 Grade 1 -40 to +125 C 8-DFN Small Flag Trays MR25H128AMDF Tape and Reel MR25H128AMDFR Table 5.1 Ordering Part Numbers Memory Speed Voltage Density Revision Temp Package Ship Grade Example Ordering Part Number MR 25 H 128 A P DF R ES Everspin MRAM MR

40 MHz 25

3.0v. Vdd H

128 Kb 128

Industrial -40 to 85°C C AEC-Q100 Grade 3 -40 to 85°C P AEC-Q100 Grade 1 -40 to 125°C M 8-pin DFN Small Flag DF Tray Blank Tape and Reel R Mass Production Blank Customer Samples CS Engineering Samples ES

0.10 C2X

NOTE: 1. All dimensions are in mm. Angles in degrees. 2. Coplanarity applies to the exposed pad as well as the terminals. Coplanarity shall be within 0.08 mm. 3. Refer to JEDEC MO-229-E 6. MECHANICAL DRAWINGS Figure 6.1 DFN Small Flag Package Exposed metal Pad. Do not con- nect anything except VSS Dimension A B C D E F G H I J K L M Nominal 5.00 6.00 0.85 1.27

0.1 June 1, 2015 First Draft

0.2 September 29, 2015

Corrected address range and timing diagrams for READ and WRITE to Address bits 0-13. Added Grade 3 parameters to Table 4.4 and refor- matted the Table. 0.3 November 2, 2015 Revised Part Number Decoder Table.

1.0 October 1, 2016

Production release. Removed all Preliminary status statements and indications. Added nominal values to DFN package outline dimen- sions table.

1.1 February 1, 2017 Added tHO and tV relationship to Synchronous Data Timing

1.2 March 23, 2018 Updated the Contact Us table

REVISION HISTORY

Copyright © 2018 Everspin Technologies, Inc. MR25H128A Rev. 1.2 3/2018 MR25H128A Everspin Technologies, Inc. Information in this document is provided solely to enable system and software implementers to use Everspin Technologies products. There are no express or implied licenses granted hereunder to design or fabricate any integrated circuit or circuits based on the information in this document. Everspin Technologies reserves the right to make changes without further notice to any products herein. Everspin makes no warranty, representation or guarantee regarding the suitability of its products for any particular pur- pose, nor does Everspin Technologies assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental dam- ages. “Typical” parameters, which may be provided in Everspin Technologies data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters including “Typicals” must be validated for each customer application by customer’s technical experts. Everspin Technologies does not convey any license under its patent rights nor the rights of others. Everspin Technologies products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Everspin Technologies product could create a situation where personal injury or death may occur. Should Buyer purchase or use Everspin Technologies products for any such unintended or unauthorized applica- tion, Buyer shall indemnify and hold Everspin Technologies and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Everspin Technologies was negligent regarding the design or manufacture of the part. Everspin™ and the Everspin logo are trademarks of Everspin Technologies, Inc. All other product or service names are the property of their respective owners. Copyright © Everspin Technologies, Inc. 2018 How to Reach Us: Home Page: www.everspin.com World Wide Information Request WW Headquarters - Chandler, AZ 5670 W. Chandler Blvd., Suite 100 Chandler, Arizona 85226 Tel: +1-877-480-MRAM (6726) Local Tel: +1-480-347-1111 Fax: +1-480-347-1175 support@everspin.com orders@everspin.com sales@everspin.com Europe, Middle East and Africa Everspin Europe Support support.europe@everspin.com Japan Everspin Japan Support support.japan@everspin.com Asia Pacific Everspin Asia Support support.asia@everspin.com Filename: EST02895_MR25H128A_Datasheet_Rev 1.2 032318

Product Information

MR25H128A specifications and overview.

Summary

128Kb Serial SPI MRAM Rev. 1.2 3/2018

Description