MMST2907A JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST2907A TRANSISTOR (PNP)

FEATURES

y Epitaxial planar die construction y Complementary PNP Type available(MMST2222A) MARKING:K3F MAXIMUM RATINGS(T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.6 A P C Collector Dissipation 0.2 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA,I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA,I C =0 -5 V Collector cut-off current I CBO V CB =-50V,I E =0 -100 n A Collector cut-off current I CES V CB =-30V,I B =0 -100 nA Emitter cut-off current I EBO V EB =-3V,I C =0 -100 nA h FE(1) V CE =-10V,I C =-0.1mA 75 h FE(2) V CE =-10V,I C =-1mA 100 h FE(3) V CE =-10V,I C =-10mA 100 h FE(4) V CE =-10V,I C =-150mA 100 300 DC current gain h FE(5) V CE =-10V,I C =-500mA 50 V CE(sat) I C =-150mA,I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -1.6 V V BE(sat) I C =-150mA,I B =-15mA -0.6 -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA,I B =-50mA -2.6 V Transition frequency f T V CE =-20V,I C =-50mA,f=100MHz 200 MHz Output capacitance C ob V CB =-10V,I E =0,f=0.1MHz 8 pF Input capacitance Cib V EB =-2V,I C =0,f=0.1MHz 30 pF Delay time t d 10 n s Rise time t r V CC =-30V,V BE(off) =-1.5V,I C =-150mA I ==- 15mA 40 n s Storage time t S 80 n s Fall time t f V CC =-30V,I C =-150mA,I =-I =-15mA 30 n s SOT-323 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Nov,2015 JC(T

-0.1 -1 -10 100 -0.1 -1 -10 -100 100 200 300 400 500 -0.1 -10 -100 0 25 50 75 100 125 150 100 200 300 -1 -10 -100 -0.0 -0.3 -0.6 -0.9 -0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 f=1MHz I E =0/ I C T a =25 -20 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE =-10V -600 I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) V BE I C COMMON EMITTER V CE =-10V -600 T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) P c —— T a COLLECTOR POWER DISSIPATION P c (mW) AMBIENT TEMPERATURE T a ( ) h FE -600 β=10 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) Static Characteristic -800uA -720uA -640uA -560uA -480uA -400uA -320uA -240uA -160uA I B =-80uA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) -600 β=10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Nov,2015 Typical Characteristics

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Nov,2015

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Nov,2015