MMST2222A HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUS TRIAL CO,. LTD. FE A TURES Epitaxialplanardieconstruction Complemen tary PNP Type available(MMST2907A) Marking:K3 P MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 75 V Collector-EmitterV oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current-Continuous IC 600 m A Collector Pow er Dissipation PC 200 m W StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V (BR)CBO IC = 10μA, IE=0 75 V Collector-emitter breakdow n voltage V (BR)CEO IC = 10mA, IB =0 40 V Emitter-basebreakdow n voltage V (BR)EBO IE=10μA, IC =0 6 V Collector cut-off current ICBO V CB =70 V , IE=0 100 nA Collector cut-off current ICEO V CE =35V ,IB =0 100 nA Emittercut-offcurrent IEBO V EB = 3V , IC =0 100 nA DC currentgain hFE(1) V CE =10V , IC =0.1mA 35 hFE(2) V CE =10V , IC = 1mA 50 hFE(3) V CE =10V , IC = 10mA 75 hFE(4) V CE =10V , IC = 150mA 100 300 hFE(5) V CE =10V , IC = 500mA 40 hFE(6) V CE =1V , IC = 150mA 35 Collector-emitter saturationvoltage V CE (sat) IC =500 mA, IB = 50mA IC =150 mA, IB =15mA 0.3 V Base-emittersaturationvoltage V BE (sat) IC =500 mA, IB = 50mA IC =150 mA, IB =15mA 2.0 1.2 V Transition frequency fT V CE =20V , IC = 20mA f=100MHz 300 MHz OutputCapacitance C ob V CB =10V , IE= 0,f=1MHz 8 pF Delay time td V CC =30V , VBE(off)=-0.5V I C =150mA , I 15mA 10 nS Rise time tr 25 nS Storage time tS V CC =30V , IC =150mA I =-I B =15mA 225 nS Falltime tf 60 nS MMST 2222A (NPN ) 1. BASE 2. EMITTER SOT -323 3. COLLECTO
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUS TRIAL CO,. LTD. MMST 2222A Typical Characteristics