MMFT70R380PTH ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor MMFT70R380PTH
- FEATURES
- WithTO-220Fpackaging
- Highspeed switching
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- DC-DCconverters
- Motorcontrol
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 700 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous Tc=25℃ Tc=100℃ 7 A IDM DrainCurrent-SinglePulsed 33 A PD TotalDissipation 32.4 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.85 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor MMFT70R380PTH ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 700 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.25mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=3.2A 0.34 0.38 Ω IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=700V;VGS=0V 1 μA VSDF Diodeforwardvoltage ISD=11A,VGS =0V 1.4 V