BDX64 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX64/A/B/C
DESCRIPTION
- Collector Current -IC= -12A
- High DC Current Gain-hFE= 1000(Min)@ IC= -5A
- Complement to Type BDX65/A/B/C
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX64 -80 BDX64A -100 BDX64B -120 VCBO Collector-Base Voltage BDX64C -140 V BDX64 -60 BDX64A -80 BDX64B -100 VCEO Collector-Emitter Voltage BDX64C -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -16 A IB B Base Current-Continuous -0.2 A PC Collector Power Dissipation @ TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX64 -60 BDX64A -80 BDX64B -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX64C IC= -100mA ;IB=0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA B -2 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -3V -2.5 V VECF C-E Diode Forward Voltage IF= -5A -1.8 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -0.4 mA BDX64 VCB= -40V;IE= 0;TJ= 200℃ BDX64A VCB= -50V;IE= 0;TJ= 200℃ BDX64B VCB= -60V;IE= 0;TJ= 200℃ ICBO Collector Cutoff Current BDX64C VCB= -70V;IE= 0;TJ= 200℃ -3 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -3V 1500 hFE-2 DC Current Gain IC= -5A ; VCE= -3V 1000 hFE-3 DC Current Gain IC= -12A ; VCE= -3V 750 COB Output Capacitance IE= 0 ; VCB= -10V; ftest= 1MHz 200 pF Switching times ton Turn-on Time 1 μs toff Turn-off Time IC= -5A; IB1= -IB2= -20mA 2.5 μs isc Website：www.iscsemi.cn 2